2N3906 Spec Sheet - Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Microdot may be in either location). Silicon epitaxial planar npn transistor. Web product specification transistor 2n3906 features pinning low current (max. Web pnp general purpose amplifier.
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Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Silicon epitaxial planar npn transistor. 200 ma) low.
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Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector.
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Web product specification transistor 2n3906 features pinning low current (max. Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor.
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Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp.
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200 ma) low voltage (max. Web product specification transistor 2n3906 features pinning low current (max. Microdot may be in either location). Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor.
Semiconductor 2N3906 (2N 3906) TRANSISTOR SILICON PNP / 40V / 0.2A/B
Silicon epitaxial planar npn transistor. Microdot may be in either location). 200 ma) low voltage (max. Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.
Datasheet 2N3904
Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). 200 ma) low voltage (max. Web pnp general purpose amplifier.
2n3906 Datasheet PDF Transistor Bipolar Junction Transistor
Microdot may be in either location). Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. 200 ma) low voltage (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year.
2N3906 Datasheet PNP TRANSISTOR 60V, 200mA ST
Microdot may be in either location). Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year.
2N3906 datasheet(3/3 Pages) UTC GENERAL PURPOSE APPLIATION
Web product specification transistor 2n3906 features pinning low current (max. 200 ma) low voltage (max. Silicon epitaxial planar npn transistor. Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:
Microdot may be in either location). 200 ma) low voltage (max. Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web product specification transistor 2n3906 features pinning low current (max.